| KVR1333D3N9K2/8G
8GB (4GB 2Rx8 512M x 64-Bit x 2 pcs.)
PC3-10600 CL9 240-Pin DIMM Kit
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DESCRIPTION
ValueRAM's KVR1333D3N9K2/8G is a kit of two 512M x
64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 2Rx8 memory
modules, based on sixteen 256M x 8-bit DDR3-1333 FBGA components per
module. Total kit capacity is 8GB. The SPD's are programmed to JEDEC
standard latency DDR3-1333 timing of 9-9-9 at 1.5V. Each 240-pin DIMM
uses gold contact fingers. The electrical and mechanical specifications
are as follows:
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FEATURES
•
JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
•
VDDQ = 1.5V (1.425V ~ 1.575V)
•
667MHz fCK for 1333Mb/sec/pin
• 8
independent internal bank
•
Programmable CAS Latency: 9, 8, 7, 6
•
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
•
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
•
8-bit pre-fetch
•
Burst Length: 8 (Interleave without any limit, sequential with starting
address “000” only), 4 with tCCD = 4 which does not allow seamless read
or write [either on the fly using A12 or MRS]
•
Bi-directional Differential Data Strobe
•
Internal(self) calibration: Internal self calibration through ZQ pin (RZQ
: 240 ohm ± 1%)
• On
Die Termination using ODT pin
•
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C <
TCASE < 95°C
•
Asynchronous Reset
• PCB: Height 1.18” (30mm), double
sided component
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SPECIFICATIONS
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Power (Operating) 1.410 W* (per module)
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
Important Information:
The module defined in this data sheet is one of several configurations
available under this part number. While all configurations are
compatible, the DRAM combination and/or the module height may vary from
what is described here.
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